Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

A series of InGaN/GaN multiple quantum wells with different well thicknesses were grown on sapphire by metal organic chemical vapor deposition, and investigated by excitation power density dependent photoluminescence (PL). With increasing excitation power density, the PL peak position showed a blue shift followed by a red shift. It is believed that a screened quantum-confined Stark effect is responsible for the blue shift and the band gap renormalization due to the many body effect is responsible for the red shift.